Back to Search
Start Over
Characteristics of field-induced-drain (FID) poly-Si TFT's with high on/off current ratio
- Source :
- IEEE Transactions on Electron Devices. April, 1992, Vol. 39 Issue 4, p916, 5 p.
- Publication Year :
- 1992
-
Abstract
- Polycrystalline silicon thin-film transistors of the Field-Induction-Drain (FID) type are studied. The transistors have an inversion layer generated by the electric field acting as the drain, facilitating a lower leakage current while sustaining a high ON current. Experiments achieved an OFF current of 1.5 pA/micrometer and an ON/OFF current ratio of 10 to the seventh power. These are attributed to the superior junction properties of the FID structure.
Details
- ISSN :
- 00189383
- Volume :
- 39
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.13846639