A high-speed 16-kb GaAs SRAM of less than 5 ns using triple-level metal interconnection

The design and fabrication of a 16-kb static random access memory (SRAM) is presented. The SRAM has a triple-level metal interconnection that lowers the wiring length and chip size, thus resulting in increased speed, higher yield and a power dissipation of less than 2 W for the temperature range between 25 to 100 degrees Celsius. The process technology responsible for the enhanced performance of the device is also described, together with its unique features.