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Tunable wideband microwave band-stop and band-pass filters using YIG/GGG-GaAs layer structures

Authors :
Tsai, C.S.
Qiu, G.
Gao, H.
Yang, L.W.
Li, G.P.
Nikitov, S.A.
Gulyaev, Y.
Source :
IEEE Transactions on Magnetics. Oct, 2005, Vol. 41 Issue 10, p3568, 3 p.
Publication Year :
2005

Abstract

Magnetically tunable wideband microwave bandstop and bandpass filters using ferromagnetic resonance absorption in yttrium iron garnet/gadolinium gallium garnet-gallium arsenide (YIG/GGG-GaAs) layer structures are reported. The measured characteristics of the bandstop filter, with nonuniform bias magnetic field distribution along the YIG/GGG film, shows a large absorption bandwidth of 1900 MHz at the stopband center frequency of 11.0 GHz, average peak absorption of 13 dB, and an out-of-stopband insertion loss of 1.5 dB. The measured characteristics of the bandpass filter at the passband center frequency of 7.1 GHz demonstrates a 3-dB bandwidth of 1450 MHz, out-of-band rejection of 33 dB, and an insertion loss of 1.5 dB. A good agreement between the experimental results and the simulation results based on a lumped element equivalent circuit modeling of YIG bandstop filters has been achieved. Index Terms--Ferromagnetic resonance (FMR) absorption, tunable bandstop and bandpass filters, YIG filters.

Details

Language :
English
ISSN :
00189464
Volume :
41
Issue :
10
Database :
Gale General OneFile
Journal :
IEEE Transactions on Magnetics
Publication Type :
Academic Journal
Accession number :
edsgcl.138394366