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Investigations of high-performance GaAs solar cells grown on Ge-Si(sub1-x)Ge(sub x)-Si substrates
- Source :
- IEEE Transactions on Electron Devices. June, 2005, Vol. 52 Issue 6, p1055, 6 p.
- Publication Year :
- 2005
-
Abstract
- An integration method is used to demonstrate GaAs-SiGe one-sun solar cell efficiencies in excess of 18%. The results demonstrate that using SiGe interlayers to produce virtual Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 52
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.136442511