Study of surface states in (110) n-GaAs by exoelectron emission measurements

Thermally stimulated exoelectron emission measurements were used to determine the native surface defects of gallium arsenide. It was shown that photoluminescence intensity of gallium arsenide was improved by plasma polymerized polythiophene grown on cleaned gallium arsenide and that this is followed by the disappearance of one the emission peaks correlated to the As(sub Ga) antisite defect.