Reduction of crystalline disorder in molecular beam epitaxy GaAs on Si by MeV ion implantation and subsequent annealing

Mega electronvolt ion implantation and subsequent annealing were used to reduce crystalline disorders in molecular beam epitaxy GaAs films on Si. Results show that the success of the recrystallization process relies on the proper selection of the ion beam dose and energy. Further experimentation showed that complete recrystallization with improved quality is possible through proper implantation and subsequent annealing. The improved layers displayed defect densities that were lower than the amorphous-grown layers, particularly near the interface.