Temperature dependence of single-event burnout in n-channel power mosfets

The temperature dependence of single-event burn out (SEB) in n-channel power metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated experimentally and analytically. Experimental data are presented which indicate that the SEB susceptibility of the power MOSFET decreases with increasing temperature. A previously reported analytical model that describes the SEB mechanism is updated to include temperature variations. This model is shown to agree with the experimental trends.