Energy distribution of gap states in hydrogenated amorphous silicon by post-transit photocurrent spectroscopy: Validity of an indium-tin oxide/silicon oxide double-layer gate

The insertion of the SiOx layer between indium-tin-oxide (ITO) and alpha-Si:H does not give any additional structure in the energy distribution of gap states of alpha-Si:H measured by the post-transit photocurrent spectroscopy is demonstrated. A method for determining the recombination parameters of iron-boron pairs in silicon by analyzing the crossover points is presented.