Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements

The interface and grain-boundary mass transport measured from isothermal stress relaxation in electroplated Cu thin films with and without a passivation layer is reported. The result shows that a set of isothermal stress relaxation experiments together with appropriate modeling analysis can be used to evaluate the kinetics of interface and grain-boundary diffusion that correlate to electromigration reliability of Cu interconnects.