Red light-emitting diodes based on InP/GaP quantum dots

Authors :: Hatami, F.
Lordi, V.
Harris, J.S.
Kostial, H.
Masselink, W.T.
Source :: Journal of Applied Physics. May 1, 2005, Vol. 97 Issue 9, 096106-1-096106-3
Publication Year :: 2005
Abstract: The growth, fabrication and device characterization of InP quantum-dot light-emitting diodes based on GaP are described. The diode structures are grown on gallium phosphide substrates using gas-source molecular-beam epitaxy and the active region of the diode consists of self-assembled InP quantum dots embedded in a GaP matrix.