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Enhanced photoluminescence from porous silicon by hydrogen-plasma etching
- Source :
- Journal of Applied Physics. May 1, 2005, Vol. 97 Issue 9, 093501-1-093501-4
- Publication Year :
- 2005
-
Abstract
- Porous silicon (PS) was etched by hydrogen plasma where on the surface a large number of silicon nanocone arrays and nanocrystallines were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 97
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.134232849