Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments

Electron beam induced current profiles were used to investigate diffusion length and surface recombination velocity in semiconductor devices containing a barrier perpendicular to the scanned surface. The results showed that noise on the profile tail significantly affected the determination of the diffusion length and the surface recombination velocity. Diffusion length and surface recombination velocity were determined by analyzing the steepness dependence.