Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous silicon

Hydrogen evolution, elastic recoil detection analysis and infrared spectroscopy were used to investigate the effect of a high excitation frequency in the glow discharge technique on the process plasma and the characteristics of hydrogenated amorphous silicon. The results showed that as the substrate temperature decreased from 280 to 50 degrees celsius, significant changes occured in the structural and electrical properties of thin films prepared at the frequency of 13.56 MHz.