Raman scattering of coupled longitudinal optical phonon-plasmon modes in dryetched n+-GaAs._

The damage caused by dry etching on GaAs was studied using Raman scattering wherein the heavily doped n+-GaAs (2-3 to the 18th power super -3) analyzes thedry etch-induced damage through the coupled longitudinal optical phonon-plasmonmode as a probe. Conventional radio frequency etching, ion beam etching and electron cyclotron radio frequency reactive ion etching (ECR-RIE) were used andresults show that ECR-RIE produces the least damage.