Auger and radioactive recombination coefficients in 0.55-ev InGaAsSb

The use of radio-frequency photoreflecrance technique, which senses the changes in sample conductivity as carriers recombine following excitation by a laser pulse is detailed. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples showing very good agreement with the values obtained from low-level injection conditions.