Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates

A study is carried out on the structural and optical properties of the InGaAlAs-based multiple quantum well (MQW) 1.3 micrometer laser structures produced on InP (001) substrates by metal organic vapor phase epitaxy (MOVPE) technique in the regime of selective area growth (SAG). The results obtained from the study helps in determining the optimal SAG mask parameters for the growth of integrated InGaAlAs-based optoelectronic light-emitting components and devices.