Structural and electrical damage induced by high-energy heavy ions in SiO2/Si structures

Silicon dioxide/silicon (SiO2/Si) structures were irradiated by high-energy xenon and nickel ions. Analysis of the irradiated structures by infrared spectroscopy shows atomic displacements as well as broken and strained silicon-oxygen bonds. There was anincrease of the interface-state density and oxide trapped-charge density with ion fluence. The electrically active point defects detected in irradiated silicon were associated with vacancy complexes.