Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation

The implant activation efficiency of silicon (Si) and beryllium (Be) ions in undoped epitaxial layers of indium aluminum arsenate (InAlAs) and indium gallium arsenate (InGaAs) were measured in a study using organometallic vapor phase epitaxy. Compared to InAlAs, InGaAs obtained dopants with higher activation efficiencies. Low activation was observed in low dose Be implants due to lack of sites. Higher sheet carrier densities were obtained via Si in InAlAs and for both Si and Be saturations exist in the carrier density with increasing annealing temperature.