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Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy
- Source :
- Journal of Applied Physics. Dec 15, 2004, Vol. 96 Issue 12, 7332-7337
- Publication Year :
- 2004
-
Abstract
- The deep levels in heavily Al-doped ZnSe layers grown by molecular -beam epitaxy are investigated using deep-levels-transient spectroscopy. By assuming a Gaussian distribution of deep levels due to extended defect, the broad emission peak is successfully simulated.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 96
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.127918876