Physical and electrical properties of a Si(sub 3)N(sub 4)/Si/GaAs metal-insulator-semiconductor structure

The capacitance-voltage (C-V) curves of Si(sub 3)N(sub 4)/GaAs, Si(sub 3)N(sub 4)/Si, and also Si(sub 3)N(sub 4)/Semi (virtual semiconductor) metal-insulator-semiconductor (MIS) capacitators were simulated and compared with experimental C-V curves of the Si(sub 3)N(sub 4)/Si/GaAs structure. This indicates that the Si(sub 3)N(sub 4)/Si/GaAs structure is somewhat like a narrow band-gap material with E(sub G)=0.88eV.