Total dose effects on double gate fully depleted SOI MOSFETs

MLA

Jun, Bongim, et al. “Total Dose Effects on Double Gate Fully Depleted SOI MOSFETs.” IEEE Transactions on Nuclear Science, vol. 51, no. 6, Dec. 2004, p. 3767. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.126583557&authtype=sso&custid=ns315887.

APA

Jun, B., Xiong, H. D., Sternberg, A. L., Cirba, C. R., Chen, D., Schrimpf, R. D., Fleetwood, D. M., Schwank, J. R., & Cristoloveanu, S. (2004). Total dose effects on double gate fully depleted SOI MOSFETs. IEEE Transactions on Nuclear Science, 51(6), 3767.

Chicago

Jun, Bongim, Hao D. Xiong, Andrew L. Sternberg, Claude R. Cirba, Dakai Chen, Ronald D. Schrimpf, Daniel M. Fleetwood, James R. Schwank, and Sorin Cristoloveanu. 2004. “Total Dose Effects on Double Gate Fully Depleted SOI MOSFETs.” IEEE Transactions on Nuclear Science 51 (6): 3767. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsggo&AN=edsgcl.126583557&authtype=sso&custid=ns315887.