Interlayer coupling in (In,Mn)As/InAs/(In,Mn)As magnetic semiconductor trilayer structures

Authors :: Yanagi, S.
Munekata, H.
Kitamoto, Y.
Oiwa, A.
Slupinski, T.
Source :: Journal of Applied Physics. May 15, 2002, Vol. 91 Issue 10, p7902, 3 p.
Publication Year :: 2002
Abstract: The preparation of p-(In,Mn)As/n-InAs/p-(In,Mn)As trilayer structures by molecular beam epitaxy on GaSb/GaAs/GaAs (001) substrates is examined. Ferromagnetic coupling of the magnitude J = 7.6 * 10(super -3) mJ/m(super 2) is observed between the two magnetic p-(In,Mn)As layers with a thick n-InAs layer.

Subjects :: Epitaxy -- Research
Indium -- Magnetic properties
Gallium arsenide -- Magnetic properties
Physics

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