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On the physical mechanism of the NROM memory erase

Authors :
Larcher, Luca
Pavan, Paolo
Eitan, Boaz
Source :
IEEE Transactions on Electron Devices. Oct, 2004, Vol. 51 Issue 10, p1593, 7 p.
Publication Year :
2004

Abstract

The physical mechanism of NROM memory erase is investigated. Results reveal that the hot-hole injection will be identified as the actual conduction mechanism of NROM erases, and two compact models capable of describing the main characteristics of NROM, erase current will be developed.

Subjects

Subjects :
Flash memory -- Analysis
Reliability (Engineering) -- Analysis
Simulation methods -- Methods
Memory (Computers) -- Research
Flash memory
Semiconductor memory
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
51
Issue :
10
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.125548372

Tools

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