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Successive oxide breakdown statistics: Correlation effects, reliability methodologies, and their limits
- Source :
- IEEE Transactions on Electron Devices. Oct, 2004, Vol. 51 Issue 10, p1584, 9 p.
- Publication Year :
- 2004
-
Abstract
- The statistics of successive oxide breakdown (BD) events in MOS devices is detailed. The application of the successive BD theory to chip reliability assessment is discussed, where several failure criteria and the related reliability methodologies are considered and some of their limits are established.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.125548370