Effect of thermal annealing on the microstructural and optical properties of vertically stacked lnAs/GaAs quantum dots embedded in modulation-doped heterostructures

Authors :: Lee, H.S.
Lee, J.Y.
Kim, T.W.
Kim, M.D.
Source :: Journal of Applied Physics. Nov 15, 2003, Vol. 94 Issue 10, p6354, 4 p.
Publication Year :: 2003
Abstract: The effect of thermal annealing on multiple stacked InAs/GaAs quantum dots (QDs) embedded in an Al0.25Ga0.75As/GaAs heterostrucuture has been discussed by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. Thermal annealing effect on the microstructure and the optical properties multiply stacked InAs/GaAs QDs embedded in modulation-doped heterostructures.

Subjects :: Photoluminescence -- Research
Gallium arsenide -- Optical properties
Transmission electron microscopes -- Usage
Physics

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