Reduction of incubation period by employing OH-terminated Si(001) substrates in the atomic layer deposition of Al2O3

Authors :: Sun S. Lee
Baik Jae Y.
Ki-Seok An
Yung D. Suh
Yunsoo Kim
Source :: Journal of Physical Chemistry B. Sept 30, 2004, Vol. 108 Issue 39, p15128, 5 p.
Publication Year :: 2004
Abstract: The phenomenon of low initial growth rates in atomic layer deposition (ALD) of various oxides on HF-treated substrates can be effectively avoided by use of OH-terminated SI(001) substrates. The effect of reducing the incubation period is confirmed in the ALD process of aluminum oxide thin films in which trimethylaluminum and water are used as sources of aluminum and oxygen.

Subjects :: Chemistry, Physical and theoretical -- Research
Aluminum oxide -- Atomic properties
Silane -- Atomic properties
Chemicals, plastics and rubber industries

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