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Thermal modeling and measurement of AlGaN-GaN (HFETs) built on sapphire and SiC substrate

Authors :
Jeong Park
Moo Whan Shin
Chin C. Lee
Source :
IEEE Transactions on Electron Devices. Nov, 2004, Vol. 51 Issue 11, p1753, 8 p.
Publication Year :
2004

Abstract

The thermal performance of dual-gate-finger AlGaN-GaN heterojunction field effect transistors HFETs built on sapphire and that built on SiC substrate is studied. The peak temperatures on the surface of the devices are measured using nematic liquid crystal thermography (LCT).

Subjects

Subjects :
Thermography -- Methods
Thermography (Copying process) -- Methods
Transistors -- Research
Field-effect transistors -- Thermal properties
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
51
Issue :
11
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.125290453

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