Influence of H(sub 2)-annealing on the hydrogen distribution near SiO(sub 2)/Si(100) interfaces revealed by in situ nuclear reaction analysis

Authors :: Wilde, Markus
Matsumoto, Masuaki
Fukutani, Katsuyuki
Liu, Ziyuan
Ando, Koichi
Kawashima, Yoshiya
Fujieda, Shinji
Source :: Journal of Applied Physics. Oct 15, 2002, Vol. 92 Issue 8, p4320, 10 p.
Publication Year :: 2002
Abstract: Upon ion beam irradiation during NRA this hydrogen is redistributed within the oxide and accumulates in a ~8-nm-wide region centered ~4 nm in front of the SiO(sub 2)/Si(100) interface. Annealing in H(sub 2) near 400degrees C introduces hydrogen preferentially into the near inter facial oxide region, where apparently large numbers of hydrogen trap sites are available.

Subjects :: Nuclear reactions -- Analysis
Hydrogen -- Atomic properties
Ion bombardment -- Analysis
Physics

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