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Simulation of hole photon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor
- Source :
- Journal of Applied Physics. Jan 15, 2004, Vol. 95 Issue 2, p713, 5 p.
- Publication Year :
- 2004
-
Abstract
- Hole phonon velocity in a strained Si inversion layer grown on a relaxed SiGe substrate is theoretically investigated. The results suggest that 10 nm Si layer thickness strain on a relaxed Si0.7Ge0.3 allows one to take advantage of the strain-induced enhancements of carrier transport characteristics.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 95
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.125022488