Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits

Electrically detected magnetic resonance is used to study the microscopic structure of ion-implantation-inducted point defects that remained in large-scale Si integrated circuits (Si LSIs). The study after examining the relationship between the defects and current-voltage characteristics concludes that these defects are distributed in the near-surface n(super +) - type region close to the gate and that they are the source of the gate-induced drain leakage currents.