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Spin-injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity
- Source :
- Journal of Applied Physics. Oct 1, 2003, Vol. 94 Issue 7, 4723-4725
- Publication Year :
- 2003
-
Abstract
- An accurate first-principles approach for Co2MnGe/GaAsAND Co2MnGe/ interfaces are used to determine the technologically relevant properties such as potential discontinuity and half-metallic behavior. The effects of possible Co-Mn antisites in bulk Co2MnGe, are investigated.
- Subjects :
- Manganese -- Spectra
Germanium -- Spectra
Physics
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 94
- Issue :
- 7
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.124997813