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Spin-injection at Heusler/semiconductor interfaces: First-principles determination of potential discontinuity and half-metallicity

Authors :
Pocozzi, S.
Continenza, A.
Freeman, A.J.
Source :
Journal of Applied Physics. Oct 1, 2003, Vol. 94 Issue 7, 4723-4725
Publication Year :
2003

Abstract

An accurate first-principles approach for Co2MnGe/GaAsAND Co2MnGe/ interfaces are used to determine the technologically relevant properties such as potential discontinuity and half-metallic behavior. The effects of possible Co-Mn antisites in bulk Co2MnGe, are investigated.

Details

Language :
English
ISSN :
00218979
Volume :
94
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.124997813