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Overshoot effect in transient electroluminescence from single layer organic light-emitting diodes
- Source :
- Journal of Applied Physics. Dec 1, 2001, Vol. 90 Issue 11, p5554, 7 p.
- Publication Year :
- 2001
-
Abstract
- The overshoot effect in transient electro luminescence (EL) is attributed to an accumulation and trapping of holes at the polymer/metal interface and this effect is enhanced at large reverse bias. The roughness of the Al(sub 2)O(sub 3) has an important bearing on the electron-hole recombination near the interface and its useful manifestation is the appearance of a large EL-spike upon reversing the driving voltage.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 90
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.124837780