Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6 H-SiC

A first-principles study of cubic inclusions and stacking fault (SF)-SF interactions in 6H -SiC, based on density functional theory (DFT) in local density approximation (LDA) is reported. The study confirms that the simple rectangular quantum-well picture can describe the quantum-well (QW)-like features quite well, but the effects of spontaneous polarizations can modify them to some extent.