Failure of exchange-baised low resistance magnetic tunneling junctions upon thermal treatment

Authors :: J.H. Lee
H. Kyung
H.D. Jeong
C.S. Yoon
C.K. Kim
B.G. Park
T.D. Lee
Source :: Journal of Applied Physics. Jan 1, 2002, Vol. 91 Issue 1, 217-220
Publication Year :: 2002
Abstract: Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) were used to characterize low resistance tunneling junctions. RBS and TEM analyses also showed that the maximum temperature below which the electrode of an exchange-biased magnetic tunneling junction (MTJ) can maintain its multilayer structure lie between 400 and 500 degrees C.

Subjects :: Magnetoresistance -- Research
Electron microscopy -- Usage
Tunneling (Physics) -- Research
Physics

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