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Reaction pathways in remote nitridation of ultra thin SiO2 films
- Source :
- Journal of Applied Physics. Jan 1, 2002, Vol. 91 Issue 1, 48-55
- Publication Year :
- 2002
-
Abstract
- Low-temperature nitridation of 3 nm SiO2 films using He/N2 and N2 remote radio frequency (rf) plasmas was investigated. Nitridation using N2 remote plasmas at 0.1 Torr is very slow. N(sub 2)(super +) species are primarily responsible for top surface nitridation.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 91
- Issue :
- 1
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.124098913