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Reaction pathways in remote nitridation of ultra thin SiO2 films

Authors :
Niimi, Hiro
Khandelwal, Amit
Lamb, H. Henry
Lucovsky, Gerald
Source :
Journal of Applied Physics. Jan 1, 2002, Vol. 91 Issue 1, 48-55
Publication Year :
2002

Abstract

Low-temperature nitridation of 3 nm SiO2 films using He/N2 and N2 remote radio frequency (rf) plasmas was investigated. Nitridation using N2 remote plasmas at 0.1 Torr is very slow. N(sub 2)(super +) species are primarily responsible for top surface nitridation.

Details

Language :
English
ISSN :
00218979
Volume :
91
Issue :
1
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.124098913