Dynamic characteristics of dislocations of Ge-doped and (Ge+B) codoped silicon

The dynamic behavior of dislocation in heavily Ge-doped Si crystals and Ge and B codoped Si crystal has been investigated which demonstrates strong suppression of dislocation generation in Si codoped with Ge and B, while weak suppression occurs in Ge-doped Si and the critical stress increases gradually with increasing Ge concentration. This is interpreted in terms of dislocation immobilization due to the effective segregation of both Ge and B impurities.