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On the calculation of the quasi-bound-state energies and lifetimes in inverted MOS structures with ultrathin oxides and its application to the direct tunneling current
- Source :
- IEEE Transactions on Electron Devices. May, 2004, Vol. 51 Issue 5, p764, 10 p.
- Publication Year :
- 2004
-
Abstract
- The inverted MOS structure with extremely thin oxides as a quasi-bound-state system is discussed. A comparison with semi-classical calculation of the lifetimes is performed and direct tunneling current is calculated.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.123802242