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Modeling spiral inductors in SOS processes
- Source :
- IEEE Transactions on Electron Devices. May, 2004, Vol. 51 Issue 5, p677, 7 p.
- Publication Year :
- 2004
-
Abstract
- The existing models for simulating spiral inductors fabricated in Silicon processes are presented. The new models presented contain only four to six elements and unlike the classic PI model, provide a broadband match to measured independence behavior in both differentially driven and single-ended circuit applications.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.123800824