One dimensional heat conduction model for an electrical phase change random access memory device with an 8 F2 memory cell (F=0.15 um)

A one dimensional heat conduction model has been developed for a PCRAM device with a 0.15mu m 8F2 memory cell structure in order to evaluate the required current level for a reset operation. It is believed that the model is a useful tool for estimating the operation chracteristics of phase change random access memory (PCRAM) devices with various plug structures.