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Raman scattering in GaN pillar arrays

Authors :
Demangeot, F.
Peyrade, D.
Gleize, J.
Manin-Felazzo, L.
Frandon, J.
Chen, Y.
Renucci, M.A.
Grandjean, N.
Kuball, M.
Source :
Journal of Applied Physics. March 1, 2002, Vol. 91 Issue 5, p2866, 4 p.
Publication Year :
2002

Abstract

A detailed study of GaN pillar arrays by atomic force microscopy (AFM), Raman spectroscopy, and photoluminescence (PL) spectroscopy is presented. AFM is used to characterize the shape of the GaN pillars and revealed a large roughness of etched pillar surfaces.

Subjects

Subjects :
Raman effect -- Research
Gallium nitrate -- Research
Gallium nitrate -- Optical properties
Atomic force microscopy -- Research
Atomic force microscopy -- Usage
Physics

Details

Language :
English
ISSN :
00218979
Volume :
91
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.123609261

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