Epitaxial SnO2 thin films grown on (1[bar]012) sapphire by femtosecond pulsed laser deposition

The fabrication of epitaxial SnO2 thin films with single crystal quality on (1[bar]012) sapphire substrates at 700 degree C using femtosecond pulsed laser deposition is described. The Hall effect measurements displayed that the electron mobility of the SnO2 film is lower than that of bulk single crystal SnO2, which is caused by the scattering of conduction electrons at the film surface, substrate/film interface, and crystal defects.