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Point defects in thermal SiO2 layers: thermally stimulated luminescence and corona oxide electrical characterization
- Source :
- Journal of Applied Physics. Nov 1, 2003, Vol. 94 Issue 9, 5643-5647
- Publication Year :
- 2003
-
Abstract
- Corona oxide characterization of semiconductor measurements and thermally stimulated luminescence (TSL) were used to study point defects in thermal SiO2 layers grown on silicon. The study proved that the TSL technique together with ion irradiation is useful to monitor defect charges in very thin oxides.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 94
- Issue :
- 9
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.123303304