GaAs-MISFETs with insulating gate films formed by direct oxidation and by oxinitridation of recessed GaAs surfaces

Authors :: Takebe, Masahide
Nakamura, Kazuki
Paul, Narayan Chandra
Iiyama, Koichi
Takamiya, Saburo
Source :: IEEE Transactions on Electron Devices. March, 2004, Vol. 51 Issue 3, p311, 6 p.
Publication Year :: 2004
Abstract: Direct oxidation by an ultraviolet (UV) and ozone process and oxinitridation (plasma nitridation after oxidation) GaAs surfaces were used to form nanometer-scale gate insulating layers for depletion-type recessed gate GaAs-MISFETS. The oxinitrided gate device (GaAs-MISFET) exhibited smaller leakage current than the simple oxide gate device.

Subjects :: Gallium arsenide semiconductors -- Analysis
Field-effect transistors -- Chemical properties
Oxidation-reduction reaction
Business
Electronics
Electronics and electrical industries

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