Measurement of Si, SiF and SiF2 radicals and SiF4 molecule using very high frequency capacitively coupled plasma-employing SiF4

Authors :: Ohta, Takayuki
Ito, Masafumi
Hara, Ken-ichiro
Kawakami, Satoshi
Ishida, Tetsuro
Ishii, Nobuo
Hori, Masaru
Goto, Toshio
Source :: Journal of Applied Physics. August 1, 2003, Vol. 94 Issue 3, 1428-1435
Publication Year :: 2003
Abstract: The measurement of the absolute line-integrated density of the SiF4 molecule and the relative densities of SiF2 and SiF radicals as a function of Ne is studied. The SiF4 and SiF2 densities decreased while Si and SiF increased with an increase of Ne.

Subjects :: Silicon compounds -- Research
Silicon compounds -- Properties
Fluorides -- Analysis
Large scale integration -- Analysis
Physics

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