Ferroelectric properties of vanadium-doped Bi4Ti3O12 thin films deposited by a sol-gel method

Authors :: S.S. Kim
T.K. Song
Jinheung Kim
J.K. Kim
Source :: Journal of Applied Physics. August 15, 2002, Vol. 92 Issue 4, 2213-2215
Publication Year :: 2002
Abstract: The enhancement of ferroelectric properties in vanadium-doped Bi4Ti3O12 (BIT) thin films deposited by a sol-gel method is reported. The polarization of the V-doped BIT (BTV) thin film capacitor decreased by 19 percent, while that of the BIT decreased by 23 percent after the fatigue test with 4X10(super 10) switching cycles.

Subjects :: Titanium dioxide -- Research
Titanium dioxide -- Electric properties
Bismuth -- Research
Bismuth -- Electric properties
Dielectric films -- Research
Dielectric films -- Electric properties
Thin films -- Research
Thin films -- Electric properties
Vanadium -- Analysis
Physics

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