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Model relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films
- Source :
- Journal of Applied Physics. March 15, 2003, Vol. 93 Issue 6, 3596-3604
- Publication Year :
- 2003
-
Abstract
- An experimentally verified analytical model for pulsed dc reactive sputtering of tantalum oxide films is described. The analytical model is used to predict and analyze the effects of various process parameters on the steady-state partial pressure, deposition rate, breakdown field and leakage characteristics of the deposited tantalum oxide films.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 93
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.122750924