Heteroepitaxial growth of beta-LiGaO2 thin films on ZnO

Authors :: Ohkubo, I.
Hirose, C.
Nishii, J.
Tamura, K.
Saito, H.
Koinuma, H.
Ahemt, P.
Chikyow, T.
Ishii, T.
Miyazawa, S.
Segawa, Y.
Fukumura, T.
Kawasaki, M.
Source :: Journal of Applied Physics. Nov 1, 2002, Vol. 92 Issue 9, 5587-5589
Publication Year :: 2002
Abstract: A preliminary characterization of electrical properties for Al(500 nm)/LiGaO2(1000 nm)/ZnO(50 nm)/ScAlMgO4 (0001) (SCAM) structures, by forming 0.5 mm phis Al electrons, is presented. Heteroepitaxy of LiGaO2 is demonstrated on ZnO films, giving atomically sharp interface and fairly good exciton-related optical properties in the ZnO under layer.