Lead-Zirconate-titanate-based metal/ ferroelectric/ insulator/ semiconductor structure for nonvolatile memoirs

A study was conducted to investigate the structural and electrical properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure that incorporates an MgO/SiO2 insulating buffer between a ferroelectric layer and Si substrate. The result shows that a MgO buffer serves well not only as a template layer for growing oriented Pb(Zr,Ti)O3 (PZT) films on an amorphous surface but also as a diffusion barrier between PZT and Si substrate.