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The low frequency noise in reverse biased rectifier diodes

Authors :
Marinov, Ognian
Deen, M. Jamal
Loukanov, V.
Velikov, V.
Source :
IEEE Transactions on Electron Devices. Jan, 2002, Vol. 49 Issue 1, p184, 4 p.
Publication Year :
2002

Abstract

The low frequency noise in rectifier diodes in the breakdown region is investigated as a function of the reverse current. The results showed that two processes balance in the diode breakdown, that is, impact ionization, and microplasma switching and conducting.

Subjects

Subjects :
Diodes -- Analysis
Semiconductor device
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
49
Issue :
1
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.122491274

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