In situ second-harmonic generation measurements of the stability of Si (111)-H and kinetics of oxide regrowth in ambient

Authors :: Bodlaki, D.
Borguet, E.
Source :: Journal of Applied Physics. May 1, 2004, Vol. 95 Issue 9, 4675-4680
Publication Year :: 2004
Abstract: The oxidation of Si (111)-H surface by second-harmonic generation rotational anisotropy (SHG-RA) at 800 nm is investigated. It is shown that 800 nm SHG is sensitive to the electronic properties of the interface and could be used to probe the evolution of the chemical state of Si surface.

Subjects :: Surfaces (Physics) -- Analysis
Hydrogen -- Analysis
Silicon -- Research
Oxidation-reduction reaction -- Analysis
Physics

Tools